METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT PHOTOTRANSISTORS BASED ON SINGLE-CRYSTALLINE SEMICONDUCTOR THIN FILMS

摘要

MOSFET phototransistors, methods of operating the MOSFET phototransistors and methods of making the MOSFET phototransistors are provided. The phototransistors have a buried electrode configuration, which makes it possible to irradiate the entire surface areas of the radiation-receiving surfaces of the phototransistors.

主权项

1. A metal-oxide-semiconductor field-effect phototransistor comprising:
a substrate; a single-crystalline semiconductor film comprising: a radiation-receiving surface; an opposing, substrate-facing surface; a source region; a drain region; and a channel region; a gate stack comprising a gate dielectric and a gate electrode, wherein the gate stack is disposed on the substrate-facing surface of the single-crystalline semiconductor film, between the channel region of the single-crystalline semiconductor film and the substrate; a source electrode disposed on the substrate-facing surface of the single-crystalline semiconductor film, between the source region of the single-crystalline semiconductor film and the substrate; a drain electrode disposed on the substrate-facing surface of the single-crystalline semiconductor film, between the drain region of the single-crystalline semiconductor film and the substrate; and an antireflective coating on the radiation-receiving surface of the single-crystalline semiconductor film.