| 发明名称 |
SWITCHING DEVICE WITH CHARGE DISTRIBUTION STRUCTURE |
| 摘要 |
A semiconductor device includes a substrate and a first active layer disposed over the substrate. The semiconductor device also includes a second active layer disposed on the first active layer such that a lateral conductive channel arises between the first active layer and the second active layer. a source, gate and drain contact are disposed over the second active layer. A conductive charge distribution structure is disposed over the second active layer between the gate and drain contacts. The conductive charge distribution structure is capacitively coupled to the gate contact. |
| 申请公布号 |
US2017104077(A1) |
申请公布日期 |
2017.04.13 |
| 申请号 |
US201615388812 |
申请日期 |
2016.12.22 |
| 申请人 |
POWER INTEGRATIONS, INC. |
发明人 |
Kudymov Alexey |
| 分类号 |
H01L29/40;H01L29/66;H01L29/778;H01L29/20;H01L29/205 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer such that a lateral conductive channel arises between the first active layer and the second active layer; a source, gate and drain contact disposed over the second active layer; and a conductive charge distribution structure disposed over the second active layer between the gate and drain contacts, said conductive charge distribution structure being capacitively coupled to the gate contact. |
| 地址 |
SAN JOSE CA US |
