| 主权项 |
1. A plasma etching method which is performed using a plasma processing apparatus that is a capacitively coupled plasma processing apparatus, and includes: a processing container; a gas supply unit configured to supply an etching processing gas into the processing container; a placing table including a lower electrode provided in the processing container; an upper electrode provided above the placing table; and a plurality of electromagnets including a plurality of coils provided coaxially around a central axis passing through a center of the placing table in a vertical direction, on the upper electrode, or a plurality of electromagnets each including a coil provided around an axis extending in a vertical direction, and arranged along a plurality of concentric circles around the central axis and in a radial direction, on the upper electrode, the method comprising:
generating plasma of the processing gas to perform a plasma etching on a single film of a workpiece placed on the placing table; and controlling a current supplied to the plurality of electromagnet to change a distribution of an etching rate of the single film in the diametric direction with respect to the central axis during the generating of the plasma of the processing gas. |
