发明名称 |
AMINE CATALYSTS FOR LOW TEMPERATURE ALD/CVD SiO2 DEPOSITION USING HEXACHLORODISILANE/H2O |
摘要 |
A precursor composition is described, useful for low temperature (<150° C.) vapor deposition of silicon dioxide. The precursor composition includes hexachlorodisilane, water, and nitrogenous catalyst including an amide compound selected from the group consisting of N-ethylacetamide and N,N-dimethylformamide. Compositions and processes for forming silicon dioxide at a low temperature with alternative chemistries are also described, e.g., a precursor composition of chloroaminosilane and water, or a precursor composition of chlorosilane and ethanolamine, which may be utilized in pulsed chemical vapor deposition or atomic layer deposition processes. |
申请公布号 |
US2017103888(A1) |
申请公布日期 |
2017.04.13 |
申请号 |
US201615292760 |
申请日期 |
2016.10.13 |
申请人 |
Entegris, Inc. |
发明人 |
Guo Dingkai;Hendrix Bryan C.;Li Yuqi;DiMeo Susan V.;Li Weimin;Hunks William |
分类号 |
H01L21/02;C23C16/455;C23C16/40 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A precursor composition for low temperature (<150° C.) vapor deposition of silicon dioxide, said precursor composition comprising hexachlorodisilane, water, and nitrogenous catalyst comprising an amide compound selected from the group consisting of N-ethylacetamide and N,N-dimethylformamide. |
地址 |
Billerica MA US |