发明名称 |
THERMOELECTRIC CONVERSION ELEMENT, METHOD FOR PRODUCING THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION APPARATUS |
摘要 |
A thermoelectric conversion element includes: a first film including a perovskite structure; a second film and a third film, including a perovskite structure, disposed in such a manner that the first film is interposed between the second film and the third film; a fourth film, including a perovskite structure, disposed so as to interpose the second film with the first film; and a fifth film, including a perovskite structure, disposed so as to interpose the third film with the first film, wherein an offset in conduction band between the first film and the second film and an offset in conduction band between the first film and the third film is less than 0.25 eV, and an offset in conduction band between the second film and the fourth film and an offset in conduction band between the third film and the fifth film is more than 1 eV. |
申请公布号 |
US2017104144(A1) |
申请公布日期 |
2017.04.13 |
申请号 |
US201615286810 |
申请日期 |
2016.10.06 |
申请人 |
FUJITSU LIMITED |
发明人 |
Baniecki John David;ASO Hiroyuki;Imanaka Yoshihiko |
分类号 |
H01L35/22;H01L35/34;H01L35/32 |
主分类号 |
H01L35/22 |
代理机构 |
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代理人 |
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主权项 |
1. A thermoelectric conversion element comprising:
a first film including a perovskite structure; a second film and a third film, including a perovskite structure, disposed in such a manner that the first film is interposed between the second film and the third film; a fourth film, including a perovskite structure, disposed so as to interpose the second film with the first film; and a fifth film, including a perovskite structure, disposed so as to interpose the third film with the first film, wherein an offset in conduction band at an interface between the first film and the second film and an offset in conduction band at an interface between the first film and the third film is less than 0.25 eV, and an offset in conduction band at an interface between the second film and the fourth film and an offset in conduction band at an interface between the third film and the fifth film is more than 1 eV. |
地址 |
Kawasaki-shi JP |