Gap-fill method using high density plasma chemical vapor deposition process and manufacturing method for integrated circuits device comprising the gap-fill method,申请号KR20030092562-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	Gap-fill method using high density plasma chemical vapor deposition process and manufacturing method for integrated circuits device comprising the gap-fill method
摘要
申请公布号	KR100555539(B1)	申请公布日期	2006.03.03
申请号	KR20030092562	申请日期	2003.12.17
申请人		发明人
分类号	H01L21/205;H01L21/316;H01L21/762;H01L21/768	主分类号	H01L21/205
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Device for lubricating the bolt of the breech of an automatic firearm

Digital pressure measuring device for hydraulic or pneumatic pressure fluids (mediums)

Device for preventing lost motion in a screw thread arrangement

Installation for drying components provided with a surface coating

Tape cassette with insertable tape wiper

Roller container as a self-drivable closure container for collecting and transporting loads, as a mobile workshop or functional room for development aid uses

Network node plug

Type body for typewriters or similar machines

Folding box with a closure constructed as a metering container

Method for assembling a junction collar, and a casting mould for carrying out the method

Process for generating heat energy by combustion of a hydrocarbon compound and simultaneous recovery of the carbon contained therein

Pick-up device for mown crops

Advanced-working strap for web and channel sections

Supercharger incorporated into twin-piston internal combustion engine without connecting rods

Process for improving the smooth passage through machines of thermoplastic film webs