发明名称 |
Semiconductor device including light-emitting element |
摘要 |
A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained. |
申请公布号 |
US9620573(B2) |
申请公布日期 |
2017.04.11 |
申请号 |
US201514709929 |
申请日期 |
2015.05.12 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Kadono Masaya;Yamazaki Shunpei;Yamauchi Yukio;Kitakado Hidehito |
分类号 |
H01L27/32;H01L27/12;H01L29/66;H01L29/786;H01L51/52;H01L23/10 |
主分类号 |
H01L27/32 |
代理机构 |
Husch Blackwell LLP |
代理人 |
Husch Blackwell LLP |
主权项 |
1. A display device comprising:
a first substrate comprising:
a pixel portion comprising a light-emitting element over a first transistor with an insulating film interposed therebetween; anda driver circuit including a second transistor; a wiring configured to be electrically connected to a flexible printed circuit; a second substrate over the first substrate; a first sealing material interposed between the first substrate and the second substrate; and a second sealing material disposed outside the first sealing material, wherein the wiring is electrically connected to an electrode of the light-emitting element, wherein the wiring comprises a same layer as a source electrode of the first transistor, and wherein the wiring comprises a first region in contact with the first sealing material. |
地址 |
JP |