发明名称 Semiconductor device including light-emitting element
摘要 A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
申请公布号 US9620573(B2) 申请公布日期 2017.04.11
申请号 US201514709929 申请日期 2015.05.12
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Kadono Masaya;Yamazaki Shunpei;Yamauchi Yukio;Kitakado Hidehito
分类号 H01L27/32;H01L27/12;H01L29/66;H01L29/786;H01L51/52;H01L23/10 主分类号 H01L27/32
代理机构 Husch Blackwell LLP 代理人 Husch Blackwell LLP
主权项 1. A display device comprising: a first substrate comprising: a pixel portion comprising a light-emitting element over a first transistor with an insulating film interposed therebetween; anda driver circuit including a second transistor; a wiring configured to be electrically connected to a flexible printed circuit; a second substrate over the first substrate; a first sealing material interposed between the first substrate and the second substrate; and a second sealing material disposed outside the first sealing material, wherein the wiring is electrically connected to an electrode of the light-emitting element, wherein the wiring comprises a same layer as a source electrode of the first transistor, and wherein the wiring comprises a first region in contact with the first sealing material.
地址 JP
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