发明名称 Semiconductor device packaging
摘要 A method of manufacturing a semiconductor device package includes encapsulating at least partially a plurality of semiconductor chips with encapsulating material to form an encapsulation body. The encapsulation body has a first main surface and a second main surface. At least one of a metal layer and an organic layer is formed over the first main surface of the encapsulation body. At least one trace of the at least one of the metal layer and the organic layer is removed by laser ablation. The encapsulation body is then separated into a plurality of semiconductor device packages along the at least one trace.
申请公布号 US9620457(B2) 申请公布日期 2017.04.11
申请号 US201314090570 申请日期 2013.11.26
申请人 Infineon Technologies AG 发明人 Wachter Ulrich;Wagner Eva;Beer Gottfried
分类号 H01L23/544;H01L21/78;H01L23/31;H01L21/56;H01L23/00;B23K26/40;B23K26/402;B23K26/364;B23K103/08;B23K103/16;B23K103/00;B23K103/10;B23K103/12;B23K103/14;B23K103/18 主分类号 H01L23/544
代理机构 Murphy, Bilak & Homiller, PLLC 代理人 Murphy, Bilak & Homiller, PLLC
主权项 1. A method of manufacturing a semiconductor device package, the method comprising: encapsulating at least partially a plurality of semiconductor chips with encapsulating material to form an encapsulation body, the encapsulation body having a first main surface and a second main surface; forming at least one of a metal layer and an organic layer over the first main surface of the encapsulation body; removing at least one trace of the at least one of the metal layer and the organic layer by laser ablation; and then separating the encapsulation body into a plurality of semiconductor device packages along the at least one trace by mechanical sawing, wherein the encapsulation body comprises a first zone comprising encapsulating material and a second zone comprising a semiconductor material of a semiconductor chip, wherein the at least one of the metal layer and the organic layer extends over the first zone and the second zone, and the at least one trace extends over the first zone and the second zone, wherein separating the encapsulation body cuts through encapsulating material of the first zone and cuts through semiconductor material of the second zone.
地址 Neubiberg DE