发明名称 |
Charge pump circuit for providing multiplied voltage |
摘要 |
A charge pump comprises one or more pump stages for providing a negative boosted output voltage. Each of the one or more pump stages comprises a P-channel transistor formed in an isolated P-well and an N-channel transistor coupled in series with the P-channel transistor. Forming the P-channel transistor in the isolated P-well essentially eliminates a raised threshold voltage due to body effect. |
申请公布号 |
US9621033(B2) |
申请公布日期 |
2017.04.11 |
申请号 |
US201514849194 |
申请日期 |
2015.09.09 |
申请人 |
NXP USA, INC. |
发明人 |
Choy Jon S.;Neaves Michael G. |
分类号 |
H01L21/38;H03K3/01;H02M3/07;H02M1/00 |
主分类号 |
H01L21/38 |
代理机构 |
|
代理人 |
|
主权项 |
1. A charge pump circuit comprising:
a P-channel transistor formed on a first buried oxide layer over a first isolated P-well; and an N-channel transistor formed on a second buried oxide layer over a second isolated P-well, the N-channel transistor coupled in series with the P-channel transistor. |
地址 |
Austin TX US |