发明名称 Charge pump circuit for providing multiplied voltage
摘要 A charge pump comprises one or more pump stages for providing a negative boosted output voltage. Each of the one or more pump stages comprises a P-channel transistor formed in an isolated P-well and an N-channel transistor coupled in series with the P-channel transistor. Forming the P-channel transistor in the isolated P-well essentially eliminates a raised threshold voltage due to body effect.
申请公布号 US9621033(B2) 申请公布日期 2017.04.11
申请号 US201514849194 申请日期 2015.09.09
申请人 NXP USA, INC. 发明人 Choy Jon S.;Neaves Michael G.
分类号 H01L21/38;H03K3/01;H02M3/07;H02M1/00 主分类号 H01L21/38
代理机构 代理人
主权项 1. A charge pump circuit comprising: a P-channel transistor formed on a first buried oxide layer over a first isolated P-well; and an N-channel transistor formed on a second buried oxide layer over a second isolated P-well, the N-channel transistor coupled in series with the P-channel transistor.
地址 Austin TX US