发明名称 Data writing method, memory control circuit unit and memory storage apparatus
摘要 A data writing method for a memory storage apparatus having a first buffer memory, a second buffer memory and a rewritable non-volatile memory module is provided, and the transmission bandwidth of the first buffer memory is larger than the transmission bandwidth of the second buffer memory. The method includes: receiving a write command and first data thereof; determining whether the first data belongs to the successive big data; if the first data belongs to the successive big data, temporarily storing the first data into a first data buffer area of the first buffer memory, writing the first write data from the first data buffer area to the rewritable non-volatile memory module; and if the first data does not belongs to the successive big data, temporarily storing the first data into a second data buffer area of the second buffer memory.
申请公布号 US9619380(B2) 申请公布日期 2017.04.11
申请号 US201314038780 申请日期 2013.09.27
申请人 PHISON ELECTRONICS CORP. 发明人 Yeh Chih-Kang
分类号 G06F12/02 主分类号 G06F12/02
代理机构 Jianq Chyun IP Office 代理人 Jianq Chyun IP Office
主权项 1. A memory storage apparatus, comprising: a connecting interface unit configured to couple to a host system; a rewritable non-volatile memory module; a memory control circuit unit coupled to the connecting interface unit and the rewritable non-volatile memory module, wherein the memory control circuit unit includes a first buffer memory and the first buffer memory includes a first data buffer area; and a second buffer memory coupled to the first buffer memory, wherein the second buffer memory includes a second data buffer area and a transmission bandwidth of the second buffer memory is smaller than a transmission bandwidth of the first buffer memory, wherein the memory control circuit unit is configured to receive a write command, a start logical address corresponding to the write command and first data corresponding to the write command, wherein the memory control circuit unit is further configured to determine whether the first data is a successive big data, if the first data is the successive big data, the memory control circuit unit temporarily stores the first data into the first data buffer area and writes the first data from the first data buffer area into the rewritable non-volatile memory module, if the first data is not the successive big data, the memory control circuit unit temporarily stores the first data into the second data buffer area without storing the first data into the first data buffer area.
地址 Miaoli TW