| 发明名称 |
CURRENT OUTPUT CIRCUIT |
| 摘要 |
Provided is a current output circuit that includes: a first FET that has a power supply voltage supplied to a source thereof, that has a first voltage supplied to a gate thereof and that outputs a first current from a drain thereof; a second FET that has the power supply voltage supplied to a source thereof, that has the first voltage supplied to a gate thereof and that outputs an output current from a drain thereof; a first control circuit that controls the first voltage such that the first current comes to be at a target level; and a second control circuit that performs control such that a drain voltage of the first FET and a drain voltage of the second FET are made equal to each other. |
| 申请公布号 |
US2017099033(A1) |
申请公布日期 |
2017.04.06 |
| 申请号 |
US201615274539 |
申请日期 |
2016.09.23 |
| 申请人 |
Murata Manufacturing Co., Ltd. |
发明人 |
SHIMAMUNE Yusuke;TANAKA Satoshi;TSUTSUI Takayuki;NAKAMURA Hayato;NAKAI Kazuhito;MORISAWA Fuminori |
| 分类号 |
H03F1/02;H03F3/21;H03F3/193 |
主分类号 |
H03F1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A current output circuit comprising:
a first field-effect transistor (FET), wherein a power supply voltage is supplied to a source of the first FET, a first voltage is supplied to a gate of the first FET, and a first current is output from a drain of the first FET; a second FET, wherein the power supply voltage is supplied to a source of the second FET, the first voltage is supplied to a gate of the second FET, and an output current is output from a drain of the second FET; a first control circuit that controls the first voltage such that the first current is at a target level; and a second control circuit that makes a drain voltage of the first FET equal to a drain voltage of the second FET. |
| 地址 |
Kyoto JP |
