THIN FILM TRANSISTORS WITH TRENCH-DEFINED NANOSCALE CHANNEL LENGTHS

摘要

Thin film transistors (TFTs), including radiofrequency TFTs, with submicron-scale channel lengths and methods for making the TFTs are provided. The transistors include a trench cut into the layer of semiconductor that makes up the body of the transistors. Trench separates the source and drain regions and determines the channel length of the transistor.

主权项

1. A field effect transistor comprising:
a layer of single-crystalline inorganic semiconductor comprising an first sublayer in which the semiconductor is n-type doped or p-type doped and a second, oppositely doped sublayer adjacent to the first sublayer; a trench bisecting the first sublayer and extending into the second sublayer to provide a source region in the first sublayer on one side of the trench, a drain region in the first sublayer on the opposite side of the trench, and a channel region in the second sublayer above the trench, wherein the channel region has a length corresponding to the width of the trench; a gate dielectric disposed on the channel region; a gate contact disposed on the gate dielectric; a source contact in electrical communication with the source region; and a drain contact in electrical communication with the drain region.