发明名称 |
FABRICATION OF SHIELDED GATE TRENCH MOSFET WITH INCREASED SOURCE-METAL CONTACT |
摘要 |
Forming a semiconductor device on a semiconductor substrate having a substrate top surface includes: forming a gate trench extending from the substrate top surface into the semiconductor substrate; forming a gate electrode in the gate trench; forming a curved sidewall portion along at least a portion of a sidewall of the gate trench; forming a body region adjacent to the gate trench; forming a source region embedded in the body region, including disposing source material in a region that is along at least a part of the curved sidewall portion; forming a gate top dielectric layer over the gate electrode and having a top side that is below at least a portion of the source region; and forming a metal layer over at least a portion of a gate trench opening and at least a portion of the source region. |
申请公布号 |
US2017098695(A1) |
申请公布日期 |
2017.04.06 |
申请号 |
US201615383463 |
申请日期 |
2016.12.19 |
申请人 |
Alpha and Omega Semiconductor Incorporated |
发明人 |
Chen John |
分类号 |
H01L29/423;H01L29/08;H01L29/78;H01L21/265;H01L29/66;H01L29/10;H01L29/40 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a semiconductor device on a semiconductor substrate having a substrate top surface, comprising:
forming a gate trench extending from the substrate top surface into the semiconductor substrate; forming a gate electrode in the gate trench; forming a curved sidewall portion along at least a portion of a sidewall of the gate trench; forming a body region adjacent to the gate trench; forming a source region embedded in the body region, including disposing source material in a region that is along at least a part of the curved sidewall portion; forming a gate top dielectric layer over the gate electrode and having a top side that is below at least a portion of the source region; and forming a metal layer over at least a portion of a gate trench opening and at least a portion of the source region. |
地址 |
Sunnyvale CA US |