| 发明名称 | Package-on-package (PoP) device with integrated passive device in a via | ||
| 摘要 | A package for a use in a package-on-package (PoP) device. The package includes a substrate, a polymer layer formed on the substrate, a first via formed in the polymer layer, and a material disposed in the first via to form a first passive device. The material may be a high dielectric constant dielectric material in order to form a capacitor or a resistive material to form a resistor. | ||
| 申请公布号 | US9613917(B2) | 申请公布日期 | 2017.04.04 |
| 申请号 | US201213435809 | 申请日期 | 2012.03.30 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Hsiao Ching-Wen;Chen Chen-Shien |
| 分类号 | H01L23/52;H01L21/768;H01L21/50;H01L23/64;H01L23/538;H01L23/14;H01L21/48;H01L25/10;H01L49/02;H01L23/498 | 主分类号 | H01L23/52 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A package for a use in a package-on-package (PoP) device, comprising: a substrate; a polymer layer formed on the substrate; a first via formed in the polymer layer, the first via having a first sidewall in the polymer layer and a second sidewall in the polymer layer, the first sidewall facing the second sidewall; a non-conductive material disposed in the first via to form a first passive device, an uppermost surface of the non-conductive material engaging a passivation layer, the passivation layer extending over from the first sidewall to the second sidewall of the polymer layer; and a first contact and a second contact, the passivation layer and the first passive device being interposed between the first contact and the second contact. | ||
| 地址 | Hsin-Chu TW | ||