Display device, method of fabricating the same, and method of fabricating image sensor device

摘要

Provided are a display device, a method of fabricating the display device, and a method of fabricating an image sensor device. The method of fabricating the display device includes preparing a substrate including a cell array area and a peripheral circuit area, forming a silicon layer on the peripheral circuit area of the substrate, forming oxide layers on the cell array area and the peripheral circuit area of the substrate, forming gate dielectric layers on the silicon layer and the oxide layers, forming the gate electrodes on the gate dielectric layers, wherein the gate electrodes expose both ends of the silicon layer and both ends of the oxide layers, and injecting dopant into both ends of the silicon layer and both ends of the oxide layers at the same time.

主权项

1. A display device comprising:
a substrate comprising a cell array area and a peripheral area; an n-type transistor disposed on the cell array area of the substrate, wherein the n-type transistor comprises a cell oxide layer including source/drain parts and a channel part; and a CMOS transistor disposed on the peripheral area of the substrate, wherein the CMOS transistor comprises: an NMOS transistor comprising a circuit oxide layer, a first circuit gate dielectric layer disposed on the circuit oxide layer, and a first circuit gate electrode disposed on the first circuit gate dielectric layer; and a PMOS transistor comprising a silicon layer, a second circuit gate dielectric layer disposed on the silicon layer, and a second circuit gate electrode disposed on the second circuit gate dielectric layer, wherein: the cell oxide layer of the n-type transistor comprises metal oxide; the circuit oxide layer of the NMOS transistor comprises metal oxide; the silicon layer of the PMOS transistor comprises silicon; the circuit oxide layer of the NMOS transistor comprises an n-type dopant, and the silicon layer of the PMOS transistor comprises a p-type dopant; and the n-type dopant of the NMOS transistor is same as the p-type dopant of the PMOS transistor.