发明名称 |
MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A method of manufacturing a magnetoresistive random access memory device, the method including forming a memory structure on a substrate, the memory structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked; forming a first capping layer to cover a surface of the memory structure by a deposition process using a plasma under first conditions; and forming a second capping layer on the first capping layer by a deposition process using a plasma under second conditions different from the first conditions. |
申请公布号 |
US2017092847(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201615177597 |
申请日期 |
2016.06.09 |
申请人 |
KIM Jong-Uk;LEE Jung-Moo;PARK Soon-Oh;PARK Jung-Hwan;JUNG Sug-Woo |
发明人 |
KIM Jong-Uk;LEE Jung-Moo;PARK Soon-Oh;PARK Jung-Hwan;JUNG Sug-Woo |
分类号 |
H01L43/08;G11C11/16;H01L27/22;H01L43/10;H01L43/12;H01L43/02 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a magnetoresistive random access memory device, the method comprising:
forming a memory structure on a substrate, the memory structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked; forming a first capping layer to cover a surface of the memory structure by a deposition process using a plasma under first conditions; and forming a second capping layer on the first capping layer by a deposition process using a plasma under second conditions different from the first conditions. |
地址 |
Yongin-si KR |