OPTOELECTRIC DEVICES COMPRISING HYBRID METAMORPHIC BUFFER LAYERS

摘要

In one aspect, semiconductor structures are described herein. A semiconductor structure, in some implementations, comprises a first semiconductor layer having a first bandgap and a first lattice constant and a second semiconductor layer having a second bandgap and a second lattice constant. The second lattice constant is lower than the first lattice constant. Additionally, a transparent metamorphic buffer layer is disposed between the first semiconductor layer and the second semiconductor layer. The buffer layer has a constant or substantially constant bandgap and a varying lattice constant. The varying lattice constant is matched to the first lattice constant adjacent the first semiconductor layer and matched to the second lattice constant adjacent the second semiconductor layer. The buffer layer comprises a first portion comprising AlyGazIn(1-y-z)As and a second portion comprising GaxIn(1-x)P. The first portion is adjacent the first semiconductor layer and the second portion is adjacent the second semiconductor layer.

主权项

1. A semiconductor structure comprising:
a first semiconductor layer having a first bandgap and a first lattice constant; a second semiconductor layer having a second bandgap and a second lattice constant, the second lattice constant being lower than the first lattice constant; and a transparent metamorphic buffer layer disposed between the first semiconductor layer and the second semiconductor layer, the transparent metamorphic buffer layer having a constant or substantially constant bandgap and a varying lattice constant, the varying lattice constant being matched to the first lattice constant adjacent the first semiconductor layer and matched to the second lattice constant adjacent the second semiconductor layer, wherein the transparent metamorphic buffer layer comprises a first portion comprising AlyGazIn(1-y-z)As and a second portion comprising GaxIn(1-x)P, the first portion being adjacent the first semiconductor layer and forming between 2 percent and 50 percent of the total thickness of the transparent metamorphic buffer layer, and the second portion being adjacent the second semiconductor layer and forming between 50 percent and 98 percent of the total thickness of the transparent metamorphic buffer layer, and wherein the second portion of the transparent metamorphic buffer layer comprises a plurality of compositionally graded steps comprising GaxIn(1-x)P.