| 发明名称 |
SEMICONDUCTOR LASER RESONATOR AND SEMICONDUCTOR LASER DEVICE INCLUDING THE SAME |
| 摘要 |
A semiconductor laser resonator configured to generate a laser beam includes a gain medium layer including a semiconductor material and comprising at least one protrusion formed by at least one trench to protrude in an upper portion of the gain medium layer. In the semiconductor laser resonator, the at least one protrusion is configured to confine the laser beam as a standing wave in the at least one protrusion. |
| 申请公布号 |
US2017093129(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201615134506 |
申请日期 |
2016.04.21 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAIK Chanwook;KIM Hyochul;PARK Yeonsang |
| 分类号 |
H01S5/24;H01S5/343;H01S5/32;H01S5/02 |
主分类号 |
H01S5/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor laser resonator configured to generate a laser beam, the semiconductor laser resonator comprising:
a gain medium layer including a semiconductor material and comprising at least one protrusion formed by at least one trench to protrude in an upper portion of the gain medium layer, wherein the at least one protrusion is configured to confine the laser beam as a standing wave in the at least one protrusion. |
| 地址 |
Suwon-si KR |
