发明名称 |
SURFACE MORPHOLOGY OF NON-POLAR GALLIUM NITRIDE CONTAINING SUBSTRATES |
摘要 |
Optical devices such as LEDs and lasers are discloses. The devices include a non-polar gallium nitride substrate member having an off-axis non-polar oriented crystalline surface plane. The off-axis non-polar oriented crystalline surface plane can be up to about −0.6 degrees in a c-plane direction and up to about −20 degrees in a c-plane direction in certain embodiments. In certain embodiments, a gallium nitride containing epitaxial layer is formed overlying the off-axis non-polar oriented crystalline surface plane. In certain embodiments, devices include a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks. |
申请公布号 |
US2017092810(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201414302250 |
申请日期 |
2014.06.11 |
申请人 |
SORAA, INC. |
发明人 |
Raring James W.;Elsass Christiane |
分类号 |
H01L33/32;H01L33/06;H01S5/343;H01L33/00;H01S5/32;H01S5/323;H01L33/18;H01L33/24 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
FREMONT CA US |