| 发明名称 |
MEMORY CELL INCLUDING ELECTRET AND RANDOM ACCESS MEMORY THEREOF |
| 摘要 |
A memory cell includes: a polarizable member including an electret to store a plurality of bits; a thermal electrode to heat the polarizable member; and a program electrode opposing the thermal electrode to program the polarizable member in a bit comprising a polarized state or a non-polarized state, the polarizable member being interposed between the thermal electrode and the program electrode. A random access memory includes: a plurality of addressable memory cells, the memory cell including: a thermal electrode; a program electrode opposing the thermal electrode; a polarizable member interposed between the thermal electrode and the program electrode, the polarizable member including an electret to store a plurality of bits. |
| 申请公布号 |
US2017092652(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201514866855 |
申请日期 |
2015.09.26 |
| 申请人 |
NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY |
发明人 |
Cheung Kim P. |
| 分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory cell comprising:
a polarizable member comprising an electret to store a plurality of bits; a thermal electrode to heat the polarizable member; and a program electrode opposing the thermal electrode to program the polarizable member in a bit comprising a polarized state or a non-polarized state, the polarizable member being interposed between the thermal electrode and the program electrode. |
| 地址 |
Gaithersburg MD US |
