METHOD FOR MANUFACTURING A SEMICONDUCTOR MATERIAL INCLUDING A SEMI-POLAR III-NITRIDE LAYER

摘要

The present invention relates to a method for manufacturing a semiconductor material including a semi-polar III-nitride layer from a semi-polar starting substrate including a plurality of grooves periodically spaced apart, each groove including a first inclined flank of crystallographic orientation C (0001) and a second inclined flank of different crystallographic orientation, the method comprising the phases consisting in:
forming (2) III-nitride crystals on the first inclined flanks of the grooves, the growth parameters of the III-nitride crystals being adapted to favour lateral growth of said crystals such as to induce overlapping between adjacent III-nitride crystals, and continuing growth until coalescence of the III-nitride crystals to form a layer of coalesced III-nitride crystals;forming (3) a two-dimensional III-nitride layer on the layer of coalesced III-nitride crystals.

主权项

1. Method for manufacturing a semiconductor material including a semi-polar III-nitride layer from a starting substrate including a plurality of grooves periodically spaced apart by a distance L2, each groove including a first inclined flank of crystallographic orientation C (0001) and a second inclined flank of different crystallographic orientation,
the method comprising the phases consisting in:
forming first III-nitride crystals on the first inclined flanks of the grooves, the growth parameters of the III-nitride crystals being adapted to favour lateral growth of said crystals such as to induce overlapping between adjacent III-nitride crystals and to form extended cavities in line with the overlapping areas between the first crystals in the meeting plane between the first crystals, at the intersection between two first adjacent overlapping crystals;forming a two-dimensional III-nitride layer on the III-nitride crystals formed beforehand.