发明名称 SEMICONDUCTOR ELEMENT AND INSULATING-LAYER-FORMING COMPOSITION
摘要 Provided is a semiconductor element having a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound having a repeating unit (IA) represented by the following General Formula (IA) and a repeating unit (IB) represented by the following General Formula (IB). In General Formula (IA), R 1a represents a hydrogen atom, a halogen atom, or an alkyl group. L 1a and L 2a each independently represent a single bond or a linking group. X represents a crosslinkable group. m2a represents an integer of 1 to 5, and in a case where m2a is 2 or more, m2a number of X's may be the same or different from each other. m1a represents an integer of 1 to 5, and in a case where m1a is 2 or more, m1a number of (-L 2a -(X) m2a )'s may be the same or different from each other. In General Formula (IB),' R 1b represents a hydrogen atom, a halogen atom, or an alkyl group. L 1b represents a single bond or a linking group, and Ar 1b represents an aromatic ring. m1b represents an integer of 1 to 5.
申请公布号 EP3125277(A4) 申请公布日期 2017.03.29
申请号 EP20150769500 申请日期 2015.03.23
申请人 FUJIFILM Corporation 发明人 NAGATA, Yuzo;TAKIZAWA, Hiroo;TSUCHIMURA, Tomotaka;TSURUTA, Takuya
分类号 H01L21/312;C08F212/00;C08F220/10;H01L21/283;H01L29/786;H01L51/05;H01L51/30 主分类号 H01L21/312
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