发明名称 PROCESS FOR FABRICATING A MONOLITHIC PARALLEL INTERCONNECT STRUCTURE OF AN OPTOELECTRONIC DEVICE
摘要 An optoelectronic device having a monolithic interconnect structure includes a continuous anode layer, a discontinuous cathode layer, and an electroactive layer sandwiched between the continuous anode layer and the discontinuous cathode layer.
申请公布号 EP2483944(B1) 申请公布日期 2017.03.29
申请号 EP20100752951 申请日期 2010.08.26
申请人 BOE Technology Group Co., Ltd. 发明人 FARQUHAR, Donald, Seton;DUGGAL, Anil, Raj;HERZOG, Michael, Scott;YOUMANS, Jeffrey, Michael;RAKUFF, Stefan;BOYD, Linda, Ann
分类号 H01L51/52 主分类号 H01L51/52
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