Integrated circuit product with bulk and SOI semiconductor devices

摘要

An integrated circuit product is disclosed including an SOI structure including a bulk semiconductor substrate, a buried insulation layer positioned on the bulk semiconductor substrate and a semiconductor layer positioned on the insulation layer, wherein, in a first region of the SOI structure, the semiconductor layer and the buried insulation layer are removed and, in a second region of the SOI structure, the semiconductor layer and the buried insulation layer are present above the bulk semiconductor substrate. The product further includes a semiconductor bulk device comprising a first gate structure positioned on the bulk semiconductor substrate in the first region and an SOI semiconductor device comprising a second gate structure positioned on the semiconductor layer in the second region, wherein the first and second gate structures have a final gate height substantially extending to a common height level above an upper surface of the bulk semiconductor substrate.

主权项

1. An integrated circuit product, comprising:
an SOI structure comprising:
a bulk semiconductor substrate;a buried insulation layer positioned on said bulk semiconductor substrate; anda semiconductor layer positioned on said buried insulation layer, wherein, in a first region of said SOI structure, said semiconductor layer and said buried insulation layer are removed and, in a second region of said SOI structure, said semiconductor layer and said buried insulation layer are present above said bulk semiconductor substrate; a semiconductor bulk device comprising a first gate structure positioned on said bulk semiconductor substrate in said first region; and an SOI semiconductor device comprising a second gate structure positioned on said semiconductor layer in said second region, wherein said first and second gate structures have a final gate height substantially extending to a common height level above an upper surface of said bulk semiconductor substrate.