发明名称 |
METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING DISPLAY APPARATUS |
摘要 |
A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer. |
申请公布号 |
US2017084755(A1) |
申请公布日期 |
2017.03.23 |
申请号 |
US201615367568 |
申请日期 |
2016.12.02 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
LEE Jongchan;KHANG Yoonho;KIM Myounghwa;BAE Joonhwa;CHA Myounggeun |
分类号 |
H01L29/786;H01L29/66;H01L21/02;H01L21/3205;H01L29/45;H01L27/12 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Yongin-si KR |