发明名称 METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING DISPLAY APPARATUS
摘要 A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.
申请公布号 US2017084755(A1) 申请公布日期 2017.03.23
申请号 US201615367568 申请日期 2016.12.02
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 LEE Jongchan;KHANG Yoonho;KIM Myounghwa;BAE Joonhwa;CHA Myounggeun
分类号 H01L29/786;H01L29/66;H01L21/02;H01L21/3205;H01L29/45;H01L27/12 主分类号 H01L29/786
代理机构 代理人
主权项
地址 Yongin-si KR
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