发明名称 |
Adaptive Operation of 3D Memory |
摘要 |
A three dimensional nonvolatile memory system includes a sensing unit configured to sense bit line current and/or voltage for bit lines of a plurality of separately-selectable portions of a block and to compare respective results with a reference and an adjustment unit configured to individually modify operating parameters for one or more of the plurality of separately-selectable portions in response to the comparing of respective results with the reference. |
申请公布号 |
US2017084346(A1) |
申请公布日期 |
2017.03.23 |
申请号 |
US201615276635 |
申请日期 |
2016.09.26 |
申请人 |
SanDisk Technologies LLC |
发明人 |
Yang Niles;Yuan Jiahui;Fitzpatrick James |
分类号 |
G11C16/34;G11C29/00;G11C16/04;G11C16/10;G11C16/26;G11C13/00 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
1. A three dimensional nonvolatile memory system comprising:
a three dimensional nonvolatile memory block that contains a plurality of separately-selectable portions, an individual separately-selectable portion containing a plurality of bit lines extending perpendicular to a substrate surface; a sensing unit configured to sense bit line current and/or voltage for bit lines of the plurality of separately-selectable portions of the block and to compare respective results of the sensing for individual separately-selectable portions with a reference; and an adjustment unit that is in communication with the sensing unit, the adjustment unit configured to individually modify operating parameters for one or more of the plurality of separately-selectable portions of the block in response to the comparing of respective results for the one or more of the plurality of separately-selectable portions of the block with the reference. |
地址 |
Plano TX US |