发明名称 Adaptive Operation of 3D Memory
摘要 A three dimensional nonvolatile memory system includes a sensing unit configured to sense bit line current and/or voltage for bit lines of a plurality of separately-selectable portions of a block and to compare respective results with a reference and an adjustment unit configured to individually modify operating parameters for one or more of the plurality of separately-selectable portions in response to the comparing of respective results with the reference.
申请公布号 US2017084346(A1) 申请公布日期 2017.03.23
申请号 US201615276635 申请日期 2016.09.26
申请人 SanDisk Technologies LLC 发明人 Yang Niles;Yuan Jiahui;Fitzpatrick James
分类号 G11C16/34;G11C29/00;G11C16/04;G11C16/10;G11C16/26;G11C13/00 主分类号 G11C16/34
代理机构 代理人
主权项 1. A three dimensional nonvolatile memory system comprising: a three dimensional nonvolatile memory block that contains a plurality of separately-selectable portions, an individual separately-selectable portion containing a plurality of bit lines extending perpendicular to a substrate surface; a sensing unit configured to sense bit line current and/or voltage for bit lines of the plurality of separately-selectable portions of the block and to compare respective results of the sensing for individual separately-selectable portions with a reference; and an adjustment unit that is in communication with the sensing unit, the adjustment unit configured to individually modify operating parameters for one or more of the plurality of separately-selectable portions of the block in response to the comparing of respective results for the one or more of the plurality of separately-selectable portions of the block with the reference.
地址 Plano TX US