发明名称 NON-VOLATILE MEMORY WITH SUPPLEMENTAL SELECT GATES
摘要 A non-volatile memory system includes a plurality of groups of connected non-volatile memory cells (e.g., charge trapping memory cells), a select line, and a plurality of select gates connected to the select line. Each select gate is connected at an end (e.g. source end or drain side) of one of the groups of memory cells. The system includes one or more control circuits that are configured to determine whether the select gates are abnormal. If a select gate is determined to be abnormal, then one of the memory cells connected to the select gate is converted to operate as a select gate. The system will then perform memory operations by operating the converted memory cell as a select gate.
申请公布号 US2017084345(A1) 申请公布日期 2017.03.23
申请号 US201514860224 申请日期 2015.09.21
申请人 SANDISK TECHNOLOGIES INC. 发明人 Yang Nian Niles;Fitzpatrick Jim;Song Yiwei
分类号 G11C16/34;G11C16/26;G11C16/04;G11C16/14 主分类号 G11C16/34
代理机构 代理人
主权项 1. An apparatus, comprising: a group of non-volatile memory cells connected together; a select gate for the group of memory cells; and one or more control circuits in communication with the group of memory cells and the select gate, the one or more control circuits configured to determine that the select gate is abnormal and perform a memory operation for the group of memory cells by operating one of the memory cells as a supplemental select gate in response to determining that the select is gate is abnormal.
地址 Plano TX US