发明名称 Barrier film, organic el device, flexible substrate, and method for manufacturing barrier film
摘要 A barrier film that contains primarily silicon nitride has a total hydrogen concentration of 3×1022 atoms/cm3 or higher and a silicon-bonded hydrogen concentration proportion of 40% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration.
申请公布号 US9601718(B2) 申请公布日期 2017.03.21
申请号 US201414768858 申请日期 2014.05.23
申请人 PANASONIC CORPORATION 发明人 Isaji Yuka
分类号 H01L51/52;C23C16/34;H01L51/00;H01L27/32 主分类号 H01L51/52
代理机构 Greenblum & Bernstein, P.L.C. 代理人 Greenblum & Bernstein, P.L.C.
主权项 1. An organic EL device comprising: a first barrier film that contains primarily silicon nitride; a second barrier film that contains primarily silicon nitride; an organic EL element that is disposed between the first barrier film and the second barrier film; a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween; a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween; and a third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride, wherein at least one of the first barrier film and the second barrier film has a total hydrogen concentration of 3×1022 atoms/cm3 or higher and a silicon-bonded hydrogen concentration proportion of 55% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration, and the first barrier film and the second barrier film each have a higher silicon-bonded hydrogen concentration proportion than the third barrier film has.
地址 Osaka JP