| 发明名称 | Semiconductor device having a gate all around structure | ||
| 摘要 | A semiconductor includes a substrate including a first region and a second region, a fin extending in a first direction in the first region of the substrate, wherein the fin includes a first semiconductor pattern and a second semiconductor pattern that are disposed on each other, a first wire pattern extending in a second direction in the second region of the substrate, a first gate electrode disposed on the fin, wherein the first gate electrode extends in a third direction that is different from the first direction, and a second gate electrode surrounding an outer perimeter of the first wire pattern and extending in a fourth direction that is different from the second direction. | ||
| 申请公布号 | US9601569(B1) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201514961378 | 申请日期 | 2015.12.07 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Suk Sung-Dae;Seo Kang-Ill |
| 分类号 | H01L29/06;H01L29/78;H01L29/423;H01L29/08;H01L27/12 | 主分类号 | H01L29/06 |
| 代理机构 | F. Chau & Associates, LLC | 代理人 | F. Chau & Associates, LLC |
| 主权项 | 1. A semiconductor device comprising: a substrate including a first region and a second region; a fin extending in a first direction in the first region of the substrate, wherein the fin includes a first semiconductor pattern and a second semiconductor pattern that are disposed on each other; a first wire pattern extending in a second direction in the second region of the substrate; a first gate electrode disposed on the fin, wherein the first gate electrode extends in a third direction that is different from the first direction; and a second gate electrode surrounding an outer perimeter of the first wire pattern and extending in a fourth direction that is different from the second direction. | ||
| 地址 | Suwon-si, Gyeonggi-Do KR | ||