Methods, apparatus and system for voltage ramp testing

摘要

At least one method and system disclosed herein involves testing of integrated circuits. A device having at least one transistor and at least one dielectric layer is provided. A first voltage is provided during a first time period for performing a stress test upon the device. A second voltage is provided during a second time period for discharging at least a portion of the charge built-up as a result of the first voltage. The second voltage is of an opposite polarity of the first voltage. A sense function is provided during a third time period for determining a result of the stress test. Data relating to a breakdown of the dielectric layer based upon the result of the stress test is acquired, stored and/or transmitted.

主权项

1. A method, comprising:
providing a device having at least one transistor and at least one dielectric layer; providing a first voltage during a first time period for performing a stress test upon said device; providing a second voltage during a second time period for discharging at least a portion of the charge built-up as a result of said first voltage, wherein said second voltage is of an opposite polarity of said first voltage; performing a sense function during a third time period for determining a result of said stress test; and performing at least one of acquiring, storing, or transmitting data relating to a breakdown of said dielectric layer based upon said result of said stress test.