发明名称 Hybrid pixel control circuits for light-emitting diode display
摘要 An electronic device may include a display. The display may be formed by an array of light-emitting diodes mounted to the surface of a substrate. The light-emitting diodes may be inorganic light-emitting diodes formed from separate crystalline semiconductor structures. An array of pixel control circuits may be used to control light emission from the light-emitting diodes. Each pixel control circuit may be used to supply drive signals to a respective set of the light-emitting diodes. The pixel control circuits may each have a silicon integrated circuit that includes transistors such as emission enable transistors and drive transistors for supplying the drive signals and may each have thin-film semiconducting oxide transistors that are coupled to the integrated circuit and that serve as switching transistors.
申请公布号 US9601517(B2) 申请公布日期 2017.03.21
申请号 US201414504261 申请日期 2014.10.01
申请人 Apple Inc. 发明人 Lin Chin-Wei;Chang Shih Chang;Gupta Vasudha
分类号 H01L27/12;H01L27/32;H01L27/15;G09G3/32 主分类号 H01L27/12
代理机构 Treyz Law Group, P.C. 代理人 Treyz Law Group, P.C. ;Treyz G. Victor;Guihan Joseph F.
主权项 1. A display, comprising: a display substrate; light-emitting diodes on the substrate; an array of pixel control circuits that control the light-emitting diodes, wherein each pixel control circuit includes a silicon integrated circuit and semiconducting oxide thin-film transistor circuitry, wherein the semiconducting oxide thin-film transistor circuitry is interposed between the silicon integrated circuit and the display substrate, wherein the silicon integrated circuit comprises transistors formed from silicon, and wherein each silicon integrated circuit overlaps at least one semiconducting oxide thin-film transistor in the semiconductor oxide thin-film transistor circuitry; and conductive material that connects contacts on the silicon integrated circuit to metal traces on the display substrate, wherein the metal traces comprises source-drain terminals in the semiconducting oxide thin-film transistor circuitry.
地址 Cupertino CA US
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