| 发明名称 | Distributed amplifier | ||
| 摘要 | A distributed amplifier includes a plurality of transistors, a first line connecting gate electrodes of the transistors to each other, and a second line connecting drain electrodes of the transistors to each other, wherein the first line and the second line are electromagnetically coupled to each other at a position situated between immediately adjacent transistors among the plurality of transistors. | ||
| 申请公布号 | US9602061(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201514610283 | 申请日期 | 2015.01.30 |
| 申请人 | FUJITSU LIMITED | 发明人 | Niida Yoshitaka |
| 分类号 | H03F1/18;H03F3/21;H03F3/193;H03F3/60 | 主分类号 | H03F1/18 |
| 代理机构 | Fujitsu Patent Center | 代理人 | Fujitsu Patent Center |
| 主权项 | 1. A distributed amplifier, comprising: a plurality of transistors; a first line connecting gate electrodes of the transistors to each other; and a second line connecting drain electrodes of the transistors to each other, wherein the first line and the second line are electromagnetically coupled to each other at a position situated between immediately adjacent transistors among the plurality of transistors, wherein a distance between the first line and the second line is a first length at positions at which the first line and the second line are connected to the transistors, and is a second length shorter than the first length at the position situated between the immediately adjacent transistors among the plurality of transistors, the distance between the first line and the second line being defined as a distance between a straight line segment of the first line and a straight line segment of the second line. | ||
| 地址 | Kawasaki JP | ||