Semiconductor device and manufacturing method thereof

摘要

A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.

主权项

1. A semiconductor device comprising a driver portion and a pixel portion,
wherein the pixel portion comprises a pixel electrode and a first transistor, wherein the driver portion comprises a shielding film and a second transistor including a semiconductor layer, wherein a channel forming region of the semiconductor layer and the shielding film overlap with each other, wherein each of the first transistor and the second transistor includes a gate insulating film and a gate electrode over the gate insulating film, wherein the gate electrode includes a first conductive layer over and in contact with the gate insulating film, and a second conductive layer over and in contact with the first conductive layer, wherein the second conductive layer is thicker than the first conductive laver, and wherein an interlayer insulating film is in contact with a portion of a top surface of the first conductive layer.