| 发明名称 | Voltage control for crosspoint memory structures | ||
| 摘要 | The present disclosure provides a memory cell that includes a resistive memory element disposed between a first conductor and a second conductor, the first conductor and the second conductor configured to activate the resistive memory element. The memory cell also includes a diode disposed in parallel with the memory element between the first conductor and the second conductor. | ||
| 申请公布号 | US9601195(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201314908667 | 申请日期 | 2013.07.31 |
| 申请人 | Hewlett Packard Enterprise Development LP | 发明人 | Buchanan Brent Edgar |
| 分类号 | G11C13/00;H01L27/24;H01L29/66;H01L29/86;H01L45/00;H01L29/861;H01L29/866 | 主分类号 | G11C13/00 |
| 代理机构 | International IP Law Group, PLLC | 代理人 | International IP Law Group, PLLC |
| 主权项 | 1. A memory cell, comprising: a resistive memory element disposed between a first conductor and a second conductor, the first conductor and the second conductor configured to activate the resistive memory element; and a diode disposed in parallel with the memory element between the first conductor or the second conductor, a conduction threshold voltage of the diode being approximately equal to a designed set voltage or a designed reset voltage of the resistive memory element. | ||
| 地址 | Houston TX US | ||