发明名称 SEMICONDUCTOR SUBSTRATES WITH UNITARY VIAS AND VIA TERMINALS, AND ASSOCIATED SYSTEMS AND METHODS
摘要 Semiconductor substrates with unitary vias and via terminals, and associated systems and methods are disclosed. A representative system in accordance with a particular embodiment includes a semiconductor substrate having an opening that includes a generally cylindrical portion with a generally smooth, uniform surface. The opening also includes a terminal portion extending transversely to the cylindrical portion and intersecting. A single, uniform, homogeneous volume of conductive material is disposed in both the cylindrical portion and the terminal portion of the opening, the conductive material forming a conductive path in the cylindrical portion and at least a portion of a conductive terminal in the terminal portion. The conductive terminal has a cross-section with generally flat walls aligned with crystal planes of the semiconductor substrate material. The conductive terminal projects away from the semiconductor substrate.
申请公布号 US2017077067(A1) 申请公布日期 2017.03.16
申请号 US201615361659 申请日期 2016.11.28
申请人 Micron Technology, Inc. 发明人 Kirby Kyle K.;Parekh Kunal R.
分类号 H01L25/065 主分类号 H01L25/065
代理机构 代理人
主权项 1. A semiconductor assembly, comprising: a semiconductor substrate including a substrate material having a first major surface, a second major surface, and an opening extending from the first major surface to the second major surface, the opening including a generally cylindrical portion extending generally normal to the first major surface and a terminal portion extending transverse to the cylindrical portion and intersecting the second major surface, the terminal portion having a width generally parallel to the plane of the first major surface that is greater than a corresponding width of the cylindrical portion; and a homogeneous volume of conductive material disposed in both the cylindrical portion and the terminal portion of the opening, the conductive material forming a conductive path in the cylindrical portion and at least a portion of a conductive terminal in the terminal portion, wherein the conductive terminal has a cross-section with generally flat walls, the cross-section being taken in a plane normal to the second major surface,wherein the conductive terminal projects outwardly away from the second major surface, andwherein the conductive terminal has a first cross-sectional width in a first plane that generally corresponds to the second major surface of the semiconductor substrate, and a second cross-sectional width in a second plane that is generally parallel to the first plane and positioned beyond an outermost surface of the semiconductor substrate, the second cross-sectional width being greater than the first cross-sectional width.
地址 Boise ID US