MULTI-GATE SEMICONDUCTOR DEVICES WITH IMPROVED HOT-CARRIER INJECTION IMMUNITY

摘要

A semiconductor device includes a substrate having a first dopant type, a first gate electrode and second gate electrode formed over the substrate and spatially separated from each other, a first region of a second dopant type, having a pocket of the first dopant type, formed in the substrate between the first and second gate electrodes, the pocket being spaced apart from the first and second gate electrodes, a silicide block over the first region, a source region formed in the substrate on an opposing side of the first gate electrode from the first region and having the second dopant type, a drain region formed in the substrate on an opposing side of the second gate electrode from the first region, the drain region having the second dopant type, and a second pocket of the first dopant type formed in the drain region adjacent to the second gate electrode.

主权项

1. A semiconductor device comprising:
a substrate having a first dopant type; a first gate electrode formed over the substrate; a second gate electrode formed over the substrate and spatially separated from the first gate electrode; a first region of a second dopant type formed in the substrate between and partially underlying the first and second gate electrodes, the first region having a first dopant concentration; a first pocket of the first dopant type formed in the first region, the pocket being spaced apart from the first and second gate electrodes and having a second dopant concentration; a source region formed in the semiconductor substrate on an opposing side of the first gate electrode from the first region, the source region having the second dopant type; and a drain region formed in the semiconductor substrate on an opposing side of the second gate electrode from the first region, the drain region having the second dopant type.