发明名称 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
摘要 The resist composition according to the present invention contains a compound represented by a specific formula. The compound has high heat resistance attributed to its highly aromatic skeleton, in spite of its low molecular weight, and may be used even under high temperature baking conditions. By virtue of the above configuration, the resist composition according to the present invention is excellent in heat resistance, has high solubility in a safe solvent, has high sensitivity, and can impart a good shape to a resist pattern. That is, the resist composition according to the present invention is useful as an acid amplification type non-polymer based resist material.
申请公布号 US2017075220(A1) 申请公布日期 2017.03.16
申请号 US201515125463 申请日期 2015.03.13
申请人 Mitsubishi Gas Chemical Company, Inc. 发明人 SATO Takashi;ECHIGO Masatoshi
分类号 G03F7/038;G03F7/004;G03F7/40;G03F7/20;G03F7/32;C07C39/15;G03F7/16 主分类号 G03F7/038
代理机构 代理人
主权项 1. A resist composition comprising a compound represented by the following formula (1): wherein R1 is a 2n-valent group having 1 to 30 carbon atoms; R2 to R5 are each independently a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a thiol group, or a hydroxyl group, wherein at least one of R4 and/or at least one of R5 is a hydroxyl group and/or a thiol group; m2 and m3 are each independently an integer of 0 to 8; m4 and m5 are each independently an integer of 0 to 9, wherein at least one of m4 and m5 is an integer of 1 to 9; n is an integer of 1 to 4; and p2 to p5 are each independently an integer of 0 to 2.
地址 Tokyo JP