| 发明名称 |
NEW FORM OF SILICON AND METHOD OF MAKING THE SAME |
| 摘要 |
The invention relates to a new phase of silicon, Si24, and a method of making the same. Si24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na4Si24 and a method of making the same. Na4Si24 may be used as a precursor to make Si24. |
| 申请公布号 |
EP3019446(A4) |
申请公布日期 |
2017.03.15 |
| 申请号 |
EP20140823783 |
申请日期 |
2014.07.08 |
| 申请人 |
CARNEGIE INSTITUTION OF WASHINGTON |
发明人 |
STROBEL, Timothy, A.;KIM, Duck, Young;KURAKEVYCH, Oleksandr, O. |
| 分类号 |
C01B33/00;C01B33/02;C01B33/021;C01B33/06 |
主分类号 |
C01B33/00 |
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