| 摘要 |
A semiconductor laser device includes a substrate, ridge stripes on the substrate and separated by separation sections, a top surface electrode continuously extending over the ridge stripes, and a bottom surface electrode on a bottom surface of the substrate. Each of the ridge stripes includes a lower cladding layer on the substrate, an active layer on the lower cladding layer, an upper cladding layer on the active layer, and a contact layer on the upper cladding layer. |
