| 摘要 |
PROBLEM TO BE SOLVED: To realize stable performance of normally-off operation in a semiconductor device comprising a group III-V compound semiconductor while having hetero-structure.SOLUTION: A semiconductor device is laminated by a p-GaN layer 32, an SI-GaN layer 62, and an AlGaN layer 34, and also comprises a gate electrode 44 Schottky-connected to a top surface side of the AlGaN layer 34. A band gap of the AlGaN layer 34 is larger than that of the p-GaN layer 32, and the SI-GaN layer 62 has impurity concentration of 1×10cmor less. |
