发明名称 金属酸化物半導体膜の製造方法
摘要 The present invention provides a method for producing a metal oxide film by alternatingly repeating the following steps two or more times: a step for coating a substrate with a solution containing a metal nitrate, and forming a metal oxide precursor film by drying the coated film; and a step for changing the metal oxide precursor film into a metal oxide film. During the steps performed two or more times for changing the metal oxide precursor film into the metal oxide film, the metal oxide precursor film is changed into the metal oxide film with a maximum attained substrate temperature of 120-250°C. The present invention further provides a metal oxide film produced by this method, and a device provided with the same.
申请公布号 JP6096102(B2) 申请公布日期 2017.03.15
申请号 JP20130253190 申请日期 2013.12.06
申请人 富士フイルム株式会社 发明人 高田 真宏;田中 淳;鈴木 真之
分类号 H01L21/368;G02F1/1368;H01L21/336;H01L27/146;H01L29/786;H01L51/50;H05B33/08;H05B33/10 主分类号 H01L21/368
代理机构 代理人
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