| 摘要 |
PROBLEM TO BE SOLVED: To reduce parasitic capacitance and to prevent breaking of wire.SOLUTION: A semiconductor photodetector includes: a mesa-shaped light-receiving portion 20 provided on an InP substrate 10 and having a stack structure including an n-type InP layer 22a and a p-type InP layer 26; mesa-shaped electrode connection portions 30a to 30d provided on the InP substrate and including the same stack structure as the light-receiving portion; an insulating film 16 buried between the electrode connection portion 30a and the light-receiving portion; p-electrode wiring 42 and p-side wiring 44 provided so as to extend on the insulating film and electrically connecting a p-electrode pad 40 and the p-type InP layer 26; n-electrode wiring 54 and n-side wiring 56 electrically connecting the n-type InP layer 22a extending below the insulating film and an n-electrode pad 50 in the light-receiving portion; and a groove 38a electrically separating an n-type InP layer 32 and the n-type InP layer 22a in the electrode connection portion 30a. The n-type InP layer 22a is provided under the n-electrode wiring 54 and the n-side wiring 56 over the entire extending region. |
