发明名称 ウェーハの片面研磨方法
摘要 PROBLEM TO BE SOLVED: To provide a single side polishing method of a wafer capable of improving planarity of outer periphery of the wafer.SOLUTION: In a single side polishing method of a wafer for polishing the single side of a wafer, by bringing the single side of a wafer, fixed to a plate by means of an adhesive, into contact with a polishing cloth provided on a surface plate, and then rotating the plate and the surface plate, solid content of the adhesive has a softening point in a range of 70-76°C, and fluid viscosity at 100°C is in a range of 20000-35000 cP.
申请公布号 JP6089484(B2) 申请公布日期 2017.03.08
申请号 JP20120175255 申请日期 2012.08.07
申请人 株式会社SUMCO 发明人 福原 史也;諸岩 広大
分类号 H01L21/304 主分类号 H01L21/304
代理机构 代理人
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