Semiconductor structure and method for forming the same

摘要

A semiconductor structure and a method for forming same are provided. The semiconductor structure includes a bipolar transistor. The bipolar transistor includes a base doped contact, an emitter doped contact, a collector doped contact, and well regions. The base doped contact, the emitter doped contact and the collector doped contact are formed in the different well regions having different dopant conditions from each other.

主权项

1. A semiconductor structure, comprising:
a bipolar transistor comprising a base doped contact, an emitter doped contact, a collector doped contact and well regions, wherein the base doped contact, the emitter doped contact and the collector doped contact are formed in the different well regions having different dopant conditions from each other, the collector doped contact has a first type conductivity; and an isolation structure isolating the bipolar transistor, wherein the isolation structure has a second type conductivity opposite to the first type conductivity, the isolation structure comprises an isolation buried layer comprising a first diffused layer and a second diffused layer, the first diffused layer and the second diffused layer have the second type conductivity and different dopant conditions, all upper and lower surfaces and sidewalls of the second diffused layer are surrounded by the first diffused layer.