Insulating block in a semiconductor trench

摘要

A semiconductor device is produced by: creating an opening in a mask formed on a semiconductor body; creating, underneath the opening, a trench in the semiconductor body which has a side wall and a trench bottom; creating, while the mask is on the semiconductor body, an insulating layer covering the trench bottom and the side wall; depositing a spacer layer including a first electrode material on the insulating layer; removing the spacer layer from at least a portion of the insulating layer that covers the trench bottom; filling at least a portion of the trench with an insulating material; removing the part of the insulating material laterally confined by the spacer layer so as to leave an insulating block in the trench; and filling at least a portion of the trench with a second electrode material so as to form an electrode within the trench.

主权项

1. A method of producing a semiconductor device, the method comprising:
providing a semiconductor body having a front side; forming a mask on the front side; creating at least one opening in the mask, the opening exposing a portion of the front side; creating, underneath the at least one opening, at least one trench extending into the semiconductor body, the trench having at least one side wall and a trench bottom; creating, while the mask is arranged on the front side, an insulating layer that covers the trench bottom and the at least one side wall, wherein creating the insulating layer comprises growing a thermal oxide on the trench bottom and on the at least one side wall; depositing a spacer layer on the insulating layer, the spacer layer comprising a first electrode material; removing the spacer layer from at least a portion of the insulating layer that covers the trench bottom; filling at least a portion of the trench with an insulating material; removing only a part of the insulating material that is laterally confined by the spacer layer so as to leave an insulating block in the trench; and filling at least a portion of the trench with a second electrode material so as to form an electrode within the trench.