发明名称 |
Handling maximum activation count limit and target row refresh in DDR4 SDRAM |
摘要 |
Efficiently tracking activations to rows of memory using a reduced number of row activation counters that indicate whether a memory row is activated during an activation period and row activation counters that indicate a number of permitted activations to a memory row within a maximum activation window. |
申请公布号 |
US9589606(B2) |
申请公布日期 |
2017.03.07 |
申请号 |
US201414560674 |
申请日期 |
2014.12.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Lin Jiang;Garrett Matthew |
分类号 |
G06F12/02;G11C7/10;G11C11/406;G06F12/10;G06F13/16 |
主分类号 |
G06F12/02 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A memory controller for controlling a memory, the memory controller comprising:
a page table configured to store using a first table and a second table, wherein:
the first table includes a first entry, the first entry comprising:
a first identifier that identifies a first memory row of the memory activated during a first period of time; anda first timeout counter that indicates a first time remaining during the first period of time, andthe second table includes a second entry, the second entry comprising:
a second identifier that identifies a second memory row of the memory activated during at least one second period of time;an activation counter that counts a quantity of activations of the second memory row; anda second timeout counter that indicates a second time remaining during the at least one second period of time. |
地址 |
Suwon-si KR |