| 发明名称 |
SILICON ON POROUS SILICON |
| 摘要 |
Fabricating of radio-frequency (RF) devices involves providing a field-effect transistor formed over an oxide layer formed on a semiconductor substrate and converting at least a portion of the semiconductor substrate to porous silicon. |
| 申请公布号 |
US2017062284(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615247725 |
申请日期 |
2016.08.25 |
| 申请人 |
SKYWORKS SOLUTIONS, INC. |
发明人 |
MASON Jerod F.;WHITEFIELD David Scott |
| 分类号 |
H01L21/84;H01L21/3063;H01L21/76;H01L21/3105;H01L21/02 |
主分类号 |
H01L21/84 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a radio-frequency device, the method comprising:
providing a field-effect transistor formed over an oxide layer formed on a semiconductor substrate; and converting at least a portion of the semiconductor substrate to porous silicon. |
| 地址 |
Woburn MA US |
