Method of Forming an Interconnect Structure Having an Air Gap and Structure Thereof

摘要

A semiconductor device and method of manufacture are provided which utilize an air gap to help isolate conductive structures within a dielectric layer. A first etch stop layer is deposited over the conductive structures, and the first etch stop layer is patterned to expose corner portions of the conductive structures. A portion of the dielectric layer is removed to form an opening. A second etch stop layer is deposited to line the opening, wherein the second etch stop layer forms a stepped structure over the corner portions of the conductive structures. Dielectric material is then deposited into the opening such that an air gap is formed to isolate the conductive structures.

主权项

1. A semiconductor device having an interconnect structure, comprising:
a metal interconnect layer having a first conductive feature and a second conductive feature within a dielectric layer overlying a substrate; an etch stop layer having a stepped profile located over a first corner of the first conductive feature; dielectric material located adjacent to the etch stop layer between the first conductive feature and the second conductive feature; and an air gap located within the dielectric material between the first conductive feature and the second conductive feature.