发明名称 |
LIQUID CRYSTAL DISPLAY DEVICE |
摘要 |
A liquid crystal display includes: a substrate including a plurality of pixel areas; a TFT disposed on the substrate; a pixel electrode connected with the TFT and disposed on the TFT; a common electrode positioned on the pixel electrode and separated from the pixel electrode by a microcavity; a roof layer disposed on the common electrode; an injection hole disposed in the common electrode and the roof layer along a long-axial direction of the substrate to expose a part of the microcavity; a liquid crystal layer filling the microcavity; a first polarizer having a polarization axis in a short-axial direction of the substrate on the roof layer; and a second polarizer having a polarization axis in a long-axial direction of the substrate below the substrate, in which heights of edges in the long-axial and short-axial directions of the substrate are larger than a height of the center of the substrate. |
申请公布号 |
US2017059933(A1) |
申请公布日期 |
2017.03.02 |
申请号 |
US201615347109 |
申请日期 |
2016.11.09 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Lee Min-Woo;Song Dae Ho;Lee Woo Jae |
分类号 |
G02F1/1335;G02F1/1333;G02F1/1341;G02F1/1368;G02F1/1343 |
主分类号 |
G02F1/1335 |
代理机构 |
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代理人 |
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主权项 |
1. A liquid crystal display, comprising:
a substrate including a plurality of pixel areas; a thin film transistor disposed on the substrate; a pixel electrode connected with the thin film transistor and disposed on the thin film transistor; a common electrode positioned on the pixel electrode and separated from the pixel electrode by a microcavity; a roof layer disposed on the common electrode; an injection hole disposed in the common electrode and the roof layer along a long-axial direction of the substrate, the injection hole configured to expose a part of the microcavity; a liquid crystal layer configured to fill the microcavity; a first polarizer having a polarization axis in a short-axial direction of the substrate on the roof layer; and a second polarizer having a polarization axis in a long-axial direction of the substrate below the substrate, wherein heights of edges in the long-axial and short-axial directions of the substrate are larger than a height of the center of the substrate. |
地址 |
Yongin-si KR |