| 发明名称 |
SEMICONDUCTOR DEVICE HAVING AIR GAP STRUCTURES AND METHOD OF FABRICATING THEREOF |
| 摘要 |
A device having a conductive feature disposed on a substrate; a cap structure is disposed on top of the conductive feature and on at least two sidewalls of the conductive feature. An air gap cap disposed on the cap structure and defines an air gap adjacent the conductive feature. |
| 申请公布号 |
US2017062348(A1) |
申请公布日期 |
2017.03.02 |
| 申请号 |
US201615350689 |
申请日期 |
2016.11.14 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
TING Chih-Yuan;SHIEH Jyu-Horng |
| 分类号 |
H01L23/532;H01L23/528 |
主分类号 |
H01L23/532 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a conductive feature disposed on a substrate; a cap structure disposed on top of the conductive feature and on at least one sidewall of the conductive feature; and an air gap structure adjacent the at least one sidewall of the conductive feature. |
| 地址 |
Hsin-Chu TW |
